See a wide portfolio of discrete and integrated solutions on Booth 7-121, Nuremberg Messe, Nuremberg, Germany, June 11-13 2024
29th May 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will demonstrate its leadership position in the GaN market – as reported recently by Yole Group – at the upcoming PCIM conference and exhibition (Nuremberg, June 11-13). The company will participate at Europe’s leading power event with a full range of GaN-based activities and solutions.
At 10.00am on Thursday 13th June Dr Denis Marcon, General Manager Europe, Innoscience, will address the audience from the Tech Stage (Hall 7-743), on how GaN power devices are revolutionizing the power semiconductor sector. In his talk, ‘GaN power HEMTs: reliable, price-competitive and ready to enhance power conversion solutions,’ Dr Marcon will destroy the myths concerning GaN’s price and reliability; he will showcase how to take advance of GaN power devices to make power management systems smaller, more efficient and cheaper. He will show that by leveraging economies of scale and 8-inch wafers, Innoscience is providing price-competitive GaN power devices.
On booth 7-121, Innoscience will showcase its portfolio covering 30V to 700V rated GaN power devices, including discrete (InnoGaN), integrated with driver and protection (SolidGaN), and bi-directional (V-GaN) devices as well as GaN gate drivers.
Innoscience’s booth will also feature several demos that showcase the advances made possible with GaN technology, making power conversion and power management solutions ‘Faster, Smaller & Lighter, Greener / More Efficient & Cheaper.’
Demos will include:
l 200W LED GaN driver that is 50% smaller and thinner than its silicon counterpart
l 140W-200W All GaN AC-DC power converter that features InnoGaN at the primary and at the secondary side
l 1kW inverter for BLDC motors
l 4.2kW PSU that are 50% smaller and more efficient (80+ Titanium) than the silicon counterpart
l 2kW Solar PV microinverter
l 300W ultra high density TV PSU
l 2.4kW bi-directional DC-DC converter
l 1kW 48V-12V DC-DC converter with high power density (70% smaller than in silicon)
l InnoGaN for e-bikes with compact 240W charger and 3-phase motor driver
Denis Marcon, General Manager Europe, Innoscience said: “PCIM is a fantastic opportunity for Innoscience to detail why our high performance GaN devices are comparable in price with the best silicon MOSFETs, and that they are rugged and reliable. We have a very wide portfolio of devices covering 30V to 700V applications and available in several formats from discrete to integrated solutions – come and see for yourself.”
