World’s largest 8-inch GaN-on-Si device maker teams with power density & efficiency leader to deliver class-leading USB-PD PSU design
Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, and Silanna Semiconductor, the San Diego, California company that offers technologies that deliver best-in-class power density and efficiency, demo’d a 65 W Active Clamp Flyback (AFC) reference design with 30 W/in3 uncased power density at the PCIM exhibition in Nuremberg, Germany. The design achieves efficiency levels of greater than 94% @ 230 Vac and has a no-load power consumption of less than 25 mW.
The design combines the class-leading performance of Innoscience’s INN650D240A 650V GaN-on-silicon enhancement-mode power transistor with Silanna’s SZ1131 Fully Integrated Active Clamp Flyback (ACF) controller. The GaN HEMT enables ultra-high switching frequency, has no reverse-recovery charge and low gate charge and low output charge. RDS(on),max is 240 mΩ. Silanna’s CO2 Smart Power™ SZ1131 combines industry’s highest integration and operational efficiency (95%) with an ultra-low no-load power consumption of under 20mW.
The 65 W reference design on a PCBA measuring just 34 x 34.5 x30.5mm. It has an input voltage range of 90-265 VAC and offers USB-PD output voltages and current configurations of 5 V/3 A, 9 V/3 A, 15 V/3 A and 20 V/3.25 A. Innoscience and Silanna Semiconductor are also collaborating on higher power multi-port reference designs and will introduce them to the market soon.
SZ1131, the latest addition to Silanna’s family of CO2 Smart Power™ technologies, addresses the ultimate power management challenge facing engineers by simplifying design and improving performance while meeting environmental sustainability goals through more efficient energy use.
Yi Sun, General Manager, Innoscience America comments: “By enabling faster switching speeds, improved efficiencies and smaller components, the ACF topology addresses demands for improved performance and lower power consumption while minimizing power supply size and weight. Silanna’s integrated controller ICs and Innoscience’s designer-friendly, robust and reliable GaN FETs are a perfect match, enabling this application.”
Adds Ahsan Zaman Director of AC/DC Product Marketing) at Silanna Semiconductor: “Our goal, with our CO2 Smart Power™ IC technology is to benefit the planet and its population by delivering best-in-class power density and efficiency, so reducing energy consumption. To achieve this we welcome partnerships and initiatives with similar-thinking companies such as Innoscience whose products complement our ICs so well.”
Availability:
More information about this reference design and full test report will be available at https://powerdensity.com/reference-design in June 2022. Sample requests should be addressed directly to Silanna ([email protected]).
